Abstract
This study compares the gas response efficiency of a gas sensor substrate that is produced using screen-printing (SP) and micro-electro-mechanical systems (MEMS) technology, followed by deposition of CuInSe2 (CIS) film layers by radio-frequency (RF) sputtering and hyperthermal annealing for gas sensing applications. The SP substrates are used for CIS film deposition for RF sputtering, followed by various hyperthermal annealing treatments. SEM observations of the CIS film surfaces after annealing show surface particles with a size distribution of 155 to 30 nm, which demonstrate a phenomenon that is similar to Ostwald ripening and which creates structural variation and unevenness after annealing. The CIS film/MEMS substrates (MEMSs) gas sensor substrates are evaluated using a NIR thermal camera to determine the optimal operating temperature for direct annealing, which is 203.2 °C. Gas sensing response tests show that only H2S or NO2 gas rapidly and significantly elicit a response but a CIS film/SPs gas sensor exhibits significant resistance signal noise. The CIS film/MEMSs gas sensor is more stable than CIS film/SPs (after annealing) so it is more suitable for gas sensing. SEM images confirm that the film remains intact, so it is suitable for gas sensing applications.
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