Abstract
CeO2 is a widely used abrasive for the chemical mechanical polishing of silicon during chip manufacturing. CeO2 can be synthesized via traditional coprecipitation, hydrothermal, and solvothermal methods; however, these methods have some issues, including high vapor pressure, flammability, toxicity, volatile solvents, and narrow heating temperature range. To overcome these issues, we developed a new ionothermal synthesis approach for high-quality CeO2 particles using 1-ethyl-3-methylimidazolium tetrafluoroborate as an imidazole ionic liquid without a template. Based on the scanning electron microscopy and particle size distribution, CeO2 particles synthesized at a reaction temperature of 210 °C for 16 h displayed sizes ranging between 0.1 and 0.3 μm. Additionally, the spherical shapes exhibited good crystallinity, regular morphology, and uniform dispersion. The results of CMP experiments indicated that the abrasives could reduce the surface roughness from 1.63 to 0.29 nm (scanning area is 5 μm × 5 μm). The obtained synthesized CeO2 particles demonstrated promising performance in Si polishing, achieving removal rates of up to 255.5 nm/min. It found that the removal rate of the abrasive prepared by ionic thermal synthesis in Si polishing was twice as much as other abrasives. Further, a possible mechanism was put forward to explain the formation of CeO2 structures with various morphologies. The proposed method presents a new approach for synthesizing CeO2 particles with uniform morphology and excellent polishing properties.
Published Version
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