Preparation of c-BN films by RF sputtering and the relation of BN phase formation to the substrate bias and temperature

Abstract

This paper deals with the deposition of cubic boron nitride (c-BN) films by radio frequency(RF)magnetron sputtering. The nearly pure c-BN films have been prepared on Si(100)substrates using hexagonal boron nitride(h-BN)targets. Argon gas mixed with nitrogen gas was used as sputtering gas. The deposited films were characterized by Fourier transform infrared (FTIR) spectroscopy and transmission electron diffraction (TED). A ‘temperature-bias’ phase diagram has been worked out. It indicates that the c-BN phase prefers the relative high temperature and negative bias. An opinion was presented that the c-BN nuclei grow discontinuously with every time the ‘thermal spike’ coming.