Abstract
Abstract In this paper, the influence of substrate d.c. bias voltage on growth of cubic boron nitride (c-BN) films by radio frequency (RF) sputter is reported. Boron nitride films were deposited on p-type Si(100) wafers (8–15 Ωcm) which were biased by the d.c. voltage negatively with respect to ground. The sputtering target was hot pressed hexagonal boron nitride of 4 N purity. The sputtering gas was the mixture of nitrogen and argon. The boron nitride films were characterized with Fourier transform infrared (FTIR) spectra. At a RF power of 360 W and substrate d.c. bias voltage of −200 V, the films contained almost pure phase c-BN. It was shown that different substrate d.c. bias voltages resulted in different cubic phase contents in the c-BN films.
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