Abstract
Barium ferrite films were prepared by r.f. diode sputtering on AlN underlayers, and then their crystal orientation and magnetic properties were investigated. The AlN underlayer with the thickness of about 5000A which deposited at room temperature had well c-axis orientation. Furthermore the barium ferrite films were deposited on the AlN underlayer which had c-axis orientation. Because as-deposited barium ferrite films were not crystallized, the films were post-annealed at the temperatures between 600°C and 900°C for 5 hours in air. When the film was annealed at 650°C or more, the crystallinity of the hexagonal barium ferrite phase was improved and its [001] axis was oriented perpendicular to the film surface. It is considered that the superior orientation of [001] axis was the effect of AlN underlayer.
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