Abstract
c-Axis oriented bismuth iodide thin films were prepared by iodination of chemically deposited bismuth sulphide thin films. The mechanism of iodination is discussed in the light of the results of X-ray diffraction and electrical resistivity studies with different times of iodination. The replacement of sulphur by iodine in the Bi 2S 3 lattice is feasible in view of the favourable free energy change. The shift in the optical absorption edge of the iodized films confirms the substitution phenomenon. X-ray fluorescence studies of iodized films washed with carbon disulphide gave evidence of the isolation of sulphur on the surface of the converted BiI 3 film.
Published Version
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