Abstract
We prepared the Nano-sized bismuth titanate Bi4Ti3O12 (BIT) powders, through a high-energy ball milling process from their oxides Bi2O3 and TiO2. This BIT phase can be formed after a milling process for 40 min. With an increasing milling time, this particle size of mixture is gradually reduced, thus, we have mostly an amorphous phase. The BIT ceramics were duly obtained by sintering the synthesized powders at temperatures ranging from 850°C to 1000°C. The BIT ceramics sintered at 1020°C for 1 h, exhibiting a density with 7.52 g/cm3 of a crystaline phase and a dielectric of K = 288.11 (100 Hz), as well as a dielectric loss of 0.05 (100 kHz). The High-energy ball milling process is a promising way to prepare BIT ceramics. After the preparation of the BIT, we doped it with the Multi-Walled Carbon Nanotubes which are properly obtained by a chemical vapour deposition (CVD), using nickel as a catalyst, as well as using acetilene at 720°C, and then proceeded with the dielectric and optical measurements.
Highlights
High K ceramics makes noticeably the miniaturize passive microwave devices
The present study reports the following: 1) the preparation of nano-sized BIT powders from their oxide mixture, via a ball milling process; 2) ceramics from the synthesized powder will be presented; 3) Electrical properties of BIT ceramics, doping with multi walled carbon nanotube (MWNT), obtained via the chemical vapour deposition (CVD) process
After the preparation of the above said compound (Bi4Ti3O12), it was doped with Multi Walled Carbon Nanotubes obtained by a chemical vapour deposition (CVD) and preceded with the dielectric and optical measurements
Summary
High K ceramics makes noticeably the miniaturize passive microwave devices. Their sizes can typically be reduced in comparison to the classical ressonators and filters by a factor of 1/K (relative dielectric constant). BIT single crystals have a low dielectric constant (K ∼ 244 at 1 KHz) and a very high Curie temperature (TC = 675 ̊C), which makes it useful for various applications, such as memory elements, optical displays, piezoelectric and piroelectric devices in a wide temperature range from 20 ̊C to 600 ̊C. Room temperature it shows an orthorhombic Fmmm symmetry, which exhibits ferroelectric properties [1,2]
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