Abstract
AbstractThe present paper reports on the results of an investigation of crystallization of multilayer structures with a narrow‐gap semiconductor surrounded by two wide‐gap ones in the Al‐Ga‐P‐As system on GaAs and GaP substrates. Influence of the lattice parameters' difference on the value of thermal stress in structures with a composition gradient was determined by the bend of structures separated from the substrate. It has been proved that with the P concentration in solid solutions being less than 1% heterojunctions with less tensions than in the Al–Ga–As system are available. A new method of obtaining AlxGa1–xPyAs1–y solid solutions with the concentration of P proportional to that of Al has been worked out on the basis of which multilayer heterolight‐emitting structures have been prepared.
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