Preparation of (0 0 1)-oriented PZT thin films on silicon wafers using pulsed laser deposition

Abstract

Completely (001)-oriented Pb(Zr0.52Ti0.48)O3 (PZT) thin films deposited on (100)-silicon wafers with SrTiO3 (STO)/MgO as a buffer layer system and YBCO as a electrode, were prepared by using KrF excimer pulsed-laser deposition. The epitaxial relationships, i.e. PZT(001)∥YBCO(001)∥SrTiO3(100)∥MgO(100)∥Si(100) and PZT(110) ∥YBCO(110)∥SrTiO3(011)∥MgO(011) were detected using X-ray θ–2θ scans and pole figures or ϕ-scans. Grain size and surface morphologies of the as-prepared films were examined using atomic force microscopy and scanning electron microscopy.