Abstract
Copper Sulphide (CuS) is a p-type semiconductor material widely used in photovoltaic applications. CuS thin films have been coated on a glass substrate at 300°C by spray pyrolysis technique. Copper Sulphate in different concentrations with constant concentration of Thiourea (without any complexing agent) was used as a precursor to fabricate the films. The different properties of the films were characterized. Their structural properties were done by X-ray diffraction. XRD analysis showed that the films are high crystalline in nature. The morphological properties were done by SEM and EDX. The atomic percentage of CuS particles were recorded by EDX. The optical properties were studied by UV-Spectrometer in visible to infrared region. The band gap value of the film varied from 2.2eV to 2.7 eV with the different concentration of Copper Sulphate.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
