Preparation and Testing of Anisotropic MAPbI3 Perovskite Photoelectric Sensors.

Abstract

Perovskite structures of organic and inorganic halides are peculiar structures with many interesting properties. Using their photoelectric effect, the structures have been used in photocells, photoelectric sensors, and light-emitting diodes. In conventional perovskite film crystallization, which is a one-step method, the MAPbI3 crystals form disordered needlelike crystals at room temperature. Such needlelike crystal films have rough surfaces and low coverage to the substrate, resulting in insignificant photoelectric effects. With the assistance of an electric field and three-dimensional (3D) printing, the direction of the perovskite needlelike crystal can be arranged to make it orderly. In this way, the photoelectric sensor of the ordered MAPbI3 perovskite needlelike crystal film can be prepared. This sensor has high sensitivity, high stability, and high response speed. Moreover, it has anisotropy and higher photoelectric sensitivity in the direction perpendicular to the needle crystal. Most interestingly, the sensors respond differently to polarized light in different directions, and this effect can be used to detect the direction and degree of polarization of polarized light.