Abstract
Ru and RuO2 thin films were prepared by RF magnetron sputtering. The crystalline structure and electrical properties of these films were investigated. Reactive sputtering of a ruthenium metal target was carried out in a mixed gas of argon and oxygen at 580° C. Total pressure (P O2 +P Ar) was controlled to maintain a constant pressure of 1 Pa. The RuO2 single phase could be obtained when P O2 was 0.5 Pa and the deposition rate was about 30 nm/min. The resistivity of the 290 nm-thick RuO2 thin films deposited on SiO2(1000 nm)/Si was 54.9 µ Ω· cm. However, the resistivity increased with decreasing film thickness. Fatigue resistance of (Pb, La)TiO3 thin films with RuO2 as top and bottom electrodes was improved compared to the films on Pt electrodes.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
