Abstract
Lanthanum strontium cobalt La 0.5Sr 0.5CoO 3 (LSCO) films have been grown on Si(1 0 0) substrate by metallorganic chemical liquid deposition (MOCLD) technique using lanthanum acetate, strontium acetate and cobalt acetate as the starting materials. The technique simplified the preparation of LSCO thin films by chemical solution routes. The films were crystallized by rapid thermal annealing (RTA) process. The films annealed between 600°C and 750°C are entirely in the perovskite phase and show good conductivity. The lowest resistivity (950 μΩ cm) thin films were obtained by annealing at 750°C. The size effect of sheet resistance of the LSCO films has been discussed. PbZr 0.5Ti 0.5O 3 (PZT) films deposited onto LSCO films displayed a good P– E hysteresis characteristic.
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