Abstract
Bismuth titanate (Bi4Ti3O12) thin films have been grown on (100) silicon substrates at 550 °C by atmospheric pressure metalorganic chemical vapor deposition using Bi (C6H5)3 and Ti (OC4H9)4 as the source materials. The x-ray diffraction analysis and reflection electron diffraction pattern revealed that the film is a single crystal with a (100) orientation. Ferroelectric properties were confirmed by polarization hysteresis curve observation. The remanent polarization and coercive field were found to be 38 μC/cm2 and 45 kV/cm, respectively. The measured dielectric constant and loss tangent were 93 and 0.05, respectively, at room temperature.
Published Version
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