Abstract
The growth of Bi 2 Ti 2 O 7 films with (111) orientation on Si(100) substrate by atmospheric pressure metal-organic chemical vapor deposition(APMOCVD) technique at 480∼550 °C is presented. The films were characterized by X-ray diffraction analysis, atomic force microscopy and electron diffraction. The results show high quality Bi 2 Ti 2 O 7 films with smooth shinning surface. The dielectric properties and C-V characterization of the films were studied. The dielectric constant ( l ) and loss tangent (tg i ) were found to be 180 and 0.01 respectively. The charge storage density was 31.9fC/ w m 2 . The resistivity is higher than 1 2 10 12 z . .cm under the applied voltage of 5V. The Bi 2 Ti 2 O 7 films are suitable to be used as a new insulating gate material in dynamic random access memory (DRAM).
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