Abstract
To explore a new method to prepare B-doped silicon carbide, with B2O3 as a dopant, silicon dioxide and graphite as raw materials, B-doped silicon carbide (BxSi1-xC) was prepared using pressure-free sintering and self-spreading combustion methods. The material phase, microstructure, particle size, compressive strength and bulk density were characterized by the XRD, SEM, laser granularity tester, particle strength tester and powder comprehensive characteristic tester. The results show that the doping of B can inhibit the growth rate of the product, with the optimal ratio of SiO2:C:B2O3=60:120:150. At the same time, the crystal type of the generated product BxSi1-xC is relatively complete. The D50 is 17.3 μm, its bulk density is up to 1.08 g-1cm-3, and its single particle compression strength is second only to diamond, much higher than that of ordinary SiC.
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