Abstract
Polycrystalline lead zirconate (PZ) thin films were prepared by chemical solution deposition. Pb/Zr atomic ratios of our precursor solutions were 1.0/1 and 1.2/1, respectively. Single-phase perovskite PZ films were obtained after heat treatment at 600°C and 700°C for 1h. The PZ thin films deposited on Pt/Ti/SiO2/Si substrate exhibited a double hysteresis loop, indicating that electric-field-induced antiferroelectric to ferroelectric phase transformation occurred at room temperature. The dielectric constant and loss tangent at room temperature were 131 and 0.045, respectively.
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