Abstract
CdTe single crystals were grown by vertical Bridgman (VB) and physical vapor transport (PVT) methods. The photoluminescence was measured at 4.2 K to evaluate the crystals and to examine the behavior of residual impurities and the effect of Cd purity. The segregation of dominant residual impurities was confirmed in VB as-grown crystals. The purification effect of PVT was also confirmed. The dominant emission line (A0,X) at 1.5896 eV in the PL spectrum, related to CuCd or VCd, has been found to have a doublet structure shared by two origins, though a complete understanding is still lacking.
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