Abstract

CuCrO 2, with the delafossite structure, was prepared by solid state reaction at 1050° C under Argon; when doped with Calcium it is a p-type, low mobility semiconductor. From photo-electrochemical measurements its bandgap is determined to be 1.28 eV; further interband transitions occur at ⋟2.2, 3.08 and 3.35 eV. The valence band edge is positioned at 5.3 eV below the vacuum level, typical for oxides with metal-3d type valence bands.

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