Abstract
Searching for a chemically stable solar-absorbing layer having earth-rich elements is the key factor for next-generation photovoltaic techniques. Many theoretical studies proposed that Mott insulators have potential as photovoltaic materials. In this study, we report the systemic resuls of structural, microstructural, and optical properties of Mott insulator LaMnO3 (LMO) thin films. Structural characterization was performed by X-ray diffraction (XRD), and microstructural properties was studied by FESEM. The crystallite size and particle size of the LMO thin film are ~17.8 nm and in 30–50 nm range with uniform grain distribution. EDX spectrum of LMO thin films confirmed the maintenance of the stoichiometric ratio of LaMnO3. The optical property of LMO thin films was studied and analyzed by a UV–Vis spectrometer. LMO thin films show an indirect bandgap of ~1.27 eV with a strong electron correlation. LMO is another promising material as a light absorber for next-generation solar cells due to its absorption onset at ~1.2 eV and then two subsequent peaks at ~2.2 and ~3.1 eV with strong light absorption over a wide wavelength range in the solar spectrum.
Published Version
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