Preparation and multilayer transfer of high-quality monocrystalline graphene grown on centimeter-Cu (111) substrate

Abstract

Graphene, owing to its excellent mechanical properties, shows promising application prospects in the field of pressure sensing. Currently, chemical vapor deposition (CVD) is an effective method to synthesize graphene artificially. It is challenging to grow large monocrystals by single-point nucleation. However, meeting multiple requirements (e.g., monocrystal and monolayer) is difficult when graphene is grown by multipoint nucleation, which critically limits their practical applications. In this study, we report the growth of monocrystal and monolayer graphene on a centimeter-scale Cu (111) substrate using CVD. Multiphysics coupling establishes the guidance results of gradient and constant temperature fields, obtains a high-purity Cu (111) substrate in a gradient temperature field, and grows monolayer graphene in a constant temperature field. Experiments show that choosing the optimum time during the temperature drop of the monocrystal substrate can cause total area coverage of Cu foil transfer toward Cu (111). The concentration gradient grew larger monocrystals of graphene with the Young's modulus of 0.837 TPa on the Cu (111) substrate following multipoint nucleation. Furthermore, multilayer graphene with good uniformity was synthesized.