Abstract
Preparation of (Ga,Fe)As has been studied systematically by molecular beam epitaxy for a wide range of substrate temperature T s. It has been found that the physical properties of the epilayers can be classified into two different types depending on the T s. Epitaxy at relatively low T s (T s =260° C) has yielded homogeneous, paramagnetic Ga 1− x Fe x As epilayers, whereas epitaxy at higher temperatures ( T s=350–580°C) has resulted in GaAs epilayers with ferromagnetic inclusions. The layers prepared at high T s have exhibited magneto-optical effect with ferromagnetic characteristics.
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