Abstract
The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. The λ-modulated optical reflection was studied and the parameters of the energy structure of α-ZnSe, α-ZnS, α-ZnS0.45Se0.55 were determined. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield η = 8–12% in the blue-violet region. It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with ħωm maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice , і Zni, respectively. The models of radiative recombination are discussed.
Highlights
Thin layers of wide-gap II-VI semiconductors are widely used in various electronic devices
It should be noted that widely used epitaxy and ion implantation processes for films of III-V compounds, Ge and Si are substantially complicated in obtaining II-VI compounds and are often poorly suitable for obtaining films due to the large inconsistency of parameters of crystalline lattices of substrates and heterolayers and their coefficients of thermal expansion
Note that a similar structure manifests itself in the study of optical reflection in polarized light using λ-modulation [15]. Such a correlation of the results indicates the decisive role of the symmetry of the field of the ions forming the crystalline lattice
Summary
The preparation of zinc sulfoselenide heterolayers is considered. The possibility of obtaining a hexagonal modification of the crystal lattice by the method of isovalent substitution was shown. It has been established that the obtained heterolayers are characterized by intense photoluminescence with a quantum yield η = 8–12% in the blue-violet region It is formed by constituent bands, the nature of which is determined by the annihilation of bound excitons and interband transitions of free charge carriers. It is shown that the selection of temperature regimes allows obtaining radiation with ħωm maxima in the violet 2.80 eV, blue 2.70 eV and green 2.45 eV spectral regions. It is determined by the generation-recombination transitions involving donor and acceptor states formed by intrinsic point defects of the crystalline lattice VSe , VZ′n і Zni, respectively. Article acted received 24.10.2019; accepted for publication 15.12.2019
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