Abstract
The optical, luminescence and electrical properties of α-ZnSe heterolayers obtained by the method of isovalent replacement are investigated. The high quantum yield of luminescence η = 10-12% in the short-wave region is established. The dominant role of excitons annihilation and interband transitions of free charge carriers is revealed. The surface-barrier structures of Ni-α-ZnSe, whose spectral region of photosensitivity is ħω = 2.70-3.75 eV, was made. The hexagonal modification of the structure of the obtained heterolayers causes their polarization properties of reflection and photosensitivity.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
