Abstract
The gas barrier film formation technique using simultaneous photo-irradiation and heat-treatment has been researched on alicyclic polyimide film coated with a polysilazane solution. A fine SiO2 thin film on polyimide film was formed at low temperatures, which greatly improved the substrate’s gas barrier characteristics by this technique. The values of gas barrier characteristics depended on the substrate temperature at the time of photo-irradiation. For photo-irradiated thin film heat-treated to 150°C, the water vapor transmission rate and oxygen transmission rate fell below the equipment measurement limit of 0.02 g/m2/day and 0.02 cm3/m2/day, respectively. This polyimide film with a gas-barrier film coating has good transmittance in the region of visible light, heat resistance, and flexibility.
Highlights
The development of information appliances such as mobile phones and televisions and electronics-related products such as solar batteries has been quite active in recent years as the demand for products with even higher functionality and performance grows
We report on low-cost film formation technology for forming a gas barrier film on alicyclic polyimide (PI) film using a polysilazane-based coating method and photo-irradiation
Spectra for photoirradiated samples at different substrate temperatures and spectra for samples subjected to only heat treatment are shown
Summary
The development of information appliances such as mobile phones and televisions and electronics-related products such as solar batteries has been quite active in recent years as the demand for products with even higher functionality and performance grows As part of this trend, attention is focusing on flexible electronics for nextgeneration electronic products with flexible functions, such as flexible displays, e-paper, and flexible solar batteries having thin, light, and bendable features. Ordinary organic films have poor gas barrier characteristics with respect to water vapor and oxygen, which can lead to degraded performance caused by the oxidation of device elements formed on the flexible substrate. The development of flexible substrates having good gas barrier characteristics is anticipated as a solution to this serious problem. The above situation calls for the development of simple and low-cost low-temperature film formation technology for preparing such substrates
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