Abstract
Preparation and gas barrier characteristics of polysilazane derived multi-layered silica thin films formed on alicyclic polyimide film using ultraviolet irradiation
Highlights
In recent years, significant process has been made in the development of electronic terminal devices such as mobile phones and televisions, and electronics-related products such as solar cells, and there are calls for the development of products with greater functionality and performance [1-4]
We have successfully developed a highly transparent and highly heat-resistant alicyclic polyimide film and a PET film with good gas barrier characteristics by using ultraviolet rays from a low-pressure mercury lamp to irradiate a polysilazane coating while applying heat [25-26]
We report on how this method can be used to form multi-layer gas barrier coatings on alicyclic polyimide films with even better performance, and we present the results of examining their characteristics
Summary
Significant process has been made in the development of electronic terminal devices such as mobile phones and televisions, and electronics-related products such as solar cells, and there are calls for the development of products with greater functionality and performance [1-4]. The most popular approach involves using large-scale high-vacuum film deposition apparatus to form multiple layers of SiO2-based coatings or inorganic oxide coatings by using methods such as sputtering or vacuum deposition to restrict the temperature to which the substrate is heated [7-12] This approach is costly due to the use of complex vacuum equipment, and results in gas barrier characteristics that are still inadequate. Light irradiation was performed at an intensity of 12 mW/cm[2] for 20 minutes at a substrate temperature of 150°C This was covered with a 5% solution of MHPS by spin coating (1000 rpm, 60 seconds), followed by heat treatment at 120°C for 20 minutes to form the intermediate layer (MHPS-derived SiO2) of the multi-layer coating. Two layers of PHPS-derived SiO2 were formed according to the method using a 5wt% solution of PHPS
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