Abstract
Sb70Se30/SiO2 multilayer thin films were applied to improve the thermal stability by RF magnetron sputtering on SiO2/Si (100) substrates. The characteristics of Sb70Se30/SiO2 multilayer thin films were investigated in terms of crystallization temperature, ten years of data retention, and energy bandgap. It is observed that the crystallization temperature, 10-year data retention, and resistance of Sb70Se30/SiO2 multilayer composite thin films exhibited a higher value, suggesting that Sb70Se30/SiO2 multilayer composite thin films have superior thermal stability. The AFM measurement suggests that the SbSe (1 nm)/SiO (9 nm) multilayer thin films possess a smaller surface roughness (RMS = 0.23 nm). Besides, it was found that the phase-change time of SbSe (1 nm)/SiO (9 nm) multilayer thin films was shorter than that of GST in the process of crystallization and amorphization.
Highlights
With the increase of portable electronic devices, people’s demand for volatile memory has increased dramatically [1]
Sb70Se30/SiO2 (SbSe/SiO) multilayer thin lms were fabricated by the radio frequency (RF) sputtering method. e thermal stability, crystallization characteristics, and optical transition of SbSe/SiO phase-change material were investigated in detail. e investigations of resistance versus temperature (R-T), X-ray di raction (XRD), and surface topography measurements were carried out
The resistances of amorphous and crystallization states were observed to increase with the thickness of the SiO2 layer, which is helpful for reducing RESET current according to the joule heating equation [19]. erefore, PCM devices based on SbSe/SiO multilayer thin lms will have lower power consumption
Summary
With the increase of portable electronic devices, people’s demand for volatile memory has increased dramatically [1]. Flash is the mainstream of the nonvolatile memory market, but flash has several drawbacks such as its long operation time, the high voltage required for writing operations, and the fact used to store charges cannot meet the law of proportional reduction when it is very small [2,3,4]. Ge2Sb2Te5 has some problems such as low crystallization temperature (∼160°C) and poor data retention (∼85°C for 10 years), which cannot meet the requirements of high-density storage in the future data age [9, 10]. To this end, various strategies such as doping and compositing have been performed to improve the performances of phase-change materials. Previous studies [14,15,16] suggest that alternative multilayer phase-change materials can increase reversible phasechange speed and decrease the whole phase-change process power consumption, which is due to the fact condition that the advantages of different kinds of materials can be complementary
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