Abstract
Thin films of BaTi0.91(Hf0.5, Zr0.5)0.09O3 on Pt/SiO2/Si(100), Nb-doped SrTiO3 (100) and (111) substrates were synthesized by a pulsed laser deposition method using fourth harmonic generated light of Nd3+:YAG laser beam under low O2 partial pressure. The in-situ observation of BaTi0.91(Hf0.5, Zr0.5)0.09O3 film deposition on a Nb-doped SrTiO3 (100) substrate was performed using reflection high energy electron beam diffraction. The BaTi0.91(Hf0.5, Zr0.5)0.09O3 films deposited on Nb-doped SrTiO3 (100) and (111) substrates showed preferential [100] and [111] orientations, respectively. The ferroelectric properties of BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin films were investigated by electrical measurements. The frequency dependence of the dielectric constant of BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin film was influenced by low dielectric phase, and it was analyzed by the Debye model. The remanent polarization and coercive field of BaTi0.91(Hf0.5, Zr0.5)0.09O3 thin film were measured at room temperature, and those values were 7.4 µC/cm2 and 123 kV/cm, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
