Preparation and Ferroelectric Properties of PZT Multilayer Film

Abstract

The PZT multilayer films were prepared by sol-gel method. The effects of formamide content, crystallization temperature and number of layers on the microstructure and ferroelectric properties of PZT films were investigated by optical microscopy, XRD, AFM and SEM. When the content of formamide in the PZT precursor solution is 0.34% by weight, the surface morphology is flat, and the film formation and crystallization are highest when the crystallization temperature is 690 °C. The surface of the four-layer film has low undulation, less impurities, and uniform particle size and particle distribution on the surface of the film. The maximum undulation of the film is 10 nm, the average undulation is 6 nm, and the ferroelectric domain is dominated by 20° domain and 200° domain. When the polarization inversion voltage is 8.0V, the loaded pattern is polarized and flipped, and the flip angle is about 180°. The inverted ferroelectric domain is very stable.