Abstract
Abstract Polycrystalline and epitaxial films of a layer-structured ferroelectric Bi4Ti3O12(BIT) in perovskite phase and tungsten-bronze typed Ba2NaNb5O15(BNN)have been deposited on sapphire and alumina substrates by ECR plasma and RF magnetron sputtering using a sintered ceramic target. The substrate temperature higher than 550°C was necessary to grow BIT films in the perovskite phase without post thermal annealing. BIT films were epitaxially grown on C.A and R surfaces of a sapphire single crystal. The deposition ratio of BNN film(Ba.Na.Nb) depended on the sputtering gas pressure. The dielectric, ferroelectric and optical properties of these films are discussed.
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