Abstract
Thin film capacitors were prepared by depositing 0.835PbZr0.5Ti0.5O3 (PZT)–0.165(3PbO·SiO2·B2O3) glass-ceramic thin films of 0.5 to 1 µ m thickness on aluminum, titanium and stainless steel foils (0.05–0.2 mm thick) using a sol–gel process followed by firing at temperatures around 600° C. Materials suitable fot the composition of thin film capacitor included gold or nickel for the top electrode and Ti or Al foils for the substrate. The dielectric properties of the capacitors depended on the substrate materials. A relatively high capacitance (ε=300) with a high dielectric loss (tan δ=5%) capacitor was obtained with the Ti foil, and a relatively low capacitance (ε=64) with a low dielectric loss (tan δ=0.9%) capacitor was obtained with the Al foil. Excellent ultra-high frequency properties were shown in the case of Al foil capacitor.
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