Abstract
A preparation method is described of monophasic yttria stabilized zirconia doped with Bi 2O 3. This material is prepared from a homogeneous power which, after pressing, is sintered in a Bi 2O 3 atmosphere. The resulting ceramic has a composition of 0.78rO 2-0.206 YO 1.5-0.014BiO 1.5. The grain boundaries are enriched with bismuth. A relative density of 95% of the theoretical one is attained at a considerably lower temperature than the bismuth free sample. The electrical conductivities of the monophasic Bi doped and the Bi-free electrolyte material do not differ significantly.
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