Abstract
AbstractWe report on the measurement of band offsets and electrical characterizations of amorphous BaO, SrO and Ba0.7Sr0.3O as alternative gate oxides grown on n‐Si(001) at room temperature without further treatments. These materials provide relative dielectric constants close to those expected from bulk values even for ultra‐thin films (equivalent oxide thicknesses below 1 nm) and posess very low rechargeable trap densities. Interface defect densities are comparable to other high‐k materials for BaO and SrO films, but an order of magnitude lower for Ba0.7Sr0.3O. This demonstrates the importance of both chemical and structural interface effects (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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