Abstract
Tin-doped and undoped amorphous indium oxide films were prepared by dc magnetron sputtering without substrate heating at relatively high total gas pressures and relatively large target-substrate distance. The structural and electrical properties of these films were investigated by X-ray diffraction and Hall-effect measurements. The amorphous tin-doped indium oxide (a-ITO) films were crystallized at a temperature about 30°C higher than that for amorphous indium oxide (a-IO) films.
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