Abstract
In this paper, the CuAl1-xZnxO2 (x=0, 0.03, 0.05, 0.07, 0.1) targets have been obtained by the solid phase reaction method using analytically pure Cu2O, Al2O3, and ZnO powders as experimental raw materials, and CuAl1-xZnxO2 thin films have been prepared on quartz glass substrates by magnetron sputtering. The characteristics of CuAl1-xZnxO2 thin films have been studied systematically. The results showed that Zn doping makes the (101) and (104) diffraction peaks of CuAlO2 shift. EDS results confirmed that Zn atoms replaced Al atoms. The average transmittance could reach 57.7% at 3%, and the band gap increased as the Zn doping concentration increased and could reach 3.83 eV at 10%.
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