Abstract
Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2+ Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.
Highlights
Optoelectronic devices are found in many areas of society, from simple household appliances and multimedia systems to communications, optical monitoring, and medical instruments
Transparent conducting oxides (TCOs), which required as electrodes in these above optoelectronic devices, are made of Sn-doped In2O3 (ITO) [1], Al-doped ZnO (AZO) [2], Ga-doped ZnO (GZO) [3], SbdhoavpeedloSwnrOes2is(tAivTiOtie)s[(41]0,−o3r–1F0-−d4oΩpe⋅cdmS)naOn2d(hFiTgOh )tr[a5n]s,pwahreicnhcies (80–90%)
Because the ionic radius of the Sb3+ ion (0.76 A ) is similar to that of Sn4+ (0.71 A ), we studied optical, electrical properties and the crystal structure of Sb-doped SnO2 films deposited on quartz substrates by direct current (DC) magnetron sputtering from ceramic targets made of a mixture of SnO2 and Sb2O3
Summary
Optoelectronic devices are found in many areas of society, from simple household appliances and multimedia systems to communications, optical monitoring, and medical instruments. The previous research has been focused on thin films synthesized by RF magnetron sputtering [20, 22, 24,25,26,27,28,29,30], the sol-gel [31, 32], spay-pyrolysis [33], or PLD [34] Among these deposition methods, RF magnetron sputtering method is widely used because of high deposition rate, good adhesion, and easy control of the electrical properties of the films. Because the ionic radius of the Sb3+ ion (0.76 A ) is similar to that of Sn4+ (0.71 A ), we studied optical, electrical properties and the crystal structure of Sb-doped SnO2 films deposited on quartz substrates by DC magnetron sputtering from ceramic targets made of a mixture of SnO2 and Sb2O3. The parameters investigated were the substrate temperature during fabrication, the annealing temperature, and the percentage of the Sb2O3 dopant
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