Abstract
Ho-doped Bi4Ti3O12 ferroelectric thin films with the composition of Bi3.6Ho0.4Ti3O12 (BHT) were integrated with the epitaxial (0001)-oriented Al-doped ZnO (AZO) semiconductor thin films grown on c-sapphire substrates by pulsed laser deposition using a pure phase BHT ceramic target. The structure characterizations indicated that the BHT film grown on AZO (0001) was a single phase structure of Bi-layered Aurivillius phase bismuth titanate and showed (100)-preferred orientation. The BHT/AZO heterostructure was with a smooth interface and a uniform microstructure. All samples with various thickness were transparent and the average transmittance of (500nm)BHT/(300nm)AZO was higher than 89% in the range of 400–800nm.
Published Version
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