Abstract
Abstract Due to high transparency and electrical conductivity, the transparent conductive glass applied in very large area like gas sensor, LCD, image storage device. It is also use in field of solar cell for both Si solar cell and Dye sensitized solar cell. Radio Frequency Plasma enhanced Reactive Thermal Evaporation method is used to fabricate the transparent conductive glass by coating of tin oxide on transparent glass. In this study on attempt has been made for SnO2 thin film coating using rf-PERTE with variation of oxygen partial pressure of 8×10 -4 mbar, 6×10 -4 mbar, 4×10 -4 mbar, with tin oxide boat voltage of 16 V, 20 V, 24 V and deposition time of tin oxide on the glass subtract 3 min, 10 min, 20 min and compare resistivity with commercial available ITO. The resistivity observed for thin film coated on lab and commercially available Indium coated ITO were 82.63/cm 2 and 1.191/cm 2 respectively.
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