Preparation and characterization of single crystalline SnO 2 films deposited on α-Al 2O 3 (0001) by MOCVD

Abstract

High-quality single crystalline SnO 2 thin films have been prepared on α-Al 2O 3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. Structural, electrical and optical properties of the SnO 2 films prepared at different substrate temperatures (500 °C–800 °C) have been investigated in detail. The obtained films were pure SnO 2 with the tetragonal rutile structure. The film prepared at 600 °C showed the best single crystalline structure with a clear epitaxial relationship of SnO 2 (100)||Al 2O 3 (0001). The highest Hall mobility of the SnO 2 films was 27.67 cm 2 V − 1 s − 1 , and the average transmittance of the films in the visible range was over 90%.