Abstract
Single (200)-oriented TiN thin films were deposited on quartz substrate by direct current (DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600 °C. The effects of sputtering pressure and substrate temperature on the crystalline nature, morphology, electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), four-point resistivity test system and ultraviolet visible near-infrared (UV-Vis-NIR) spectroscopy, respectively. The results show that single (200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600 °C with the grain size increasing from 35.9 to 64.5 nm. The resistivity of the product is as low as 95 μΩ·cm, and the value of the optical reflectance is above 68 % in the near-infrared (NIR) range of 760–1500 nm.
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