Abstract
Using a Mg–Zn composite target, ternary compound Zn 1− x Mg x O thin films were prepared by direct current (DC) reactive magnetron sputtering on quartz and soda-lime glass substrates at different temperatures. The atomic ratio between Mg and Zn in the films was approximately equal to the area ratio in the target. Pure (1 1 1) oriented growth of Zn 1− x Mg x O thin films with cubic structure was obtained for Mg atomic fraction x⩾0.80 and substrate temperature as low as 200°C. The band gap of Zn 1− x Mg x O can be varied from 3.27 eV to levels above 5.3 eV by controlling the Mg area fraction in target. Zn 1− x Mg x O thin films deposited on glass substrates with this technique may have potential applications in opto-electronic devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
