Preparation and Characterization of Pb(Zr,Ti)O3 Films on SrTiO3 Substrates

Abstract

Pb(Zr,Ti)O3 (PZT) thin films have attracted great attention due to their superior ferroelectric, pyroelectric and piezoelectric properties. The epitaxial films on single-crystal substrates are expected to possess enhanced properties compared with polycrystalline films on conventional silicon wafers. We prepared epitaxial PZT films on STO (STO) substrates with different orientation by using a sol-gel method. The preparation parameters were optimized to improve crystallization of the films. Although the films were of the same composition and prepared under the same condition, different crystal phases with corresponding preferential film orientations were formed when the substrate orientation was changed. [001]-oriented tetragonal PZT film was formed on the {100} surface of the STO substrate, whereas [111]-oriented rhombohedral PZT film on the {111} surface.