Abstract
This paper presents a novel solar cell with FTO/MoSe2/perovskite/PMMA/C60/AZO/silver nanostructures. The hole-transporting material (HTM), active absorber layer, electron-transporting material (ETM), electron buffer layer, and transparent-conducting oxide layer were made of MoSe2, MAPbI3, PMMA, fullerene, and Al-doped ZnO, respectively. The SEM analysis confirmed that the MAPbI3 perovskite crystal size increased with the annealing temperature of the MoSe2 HTM films. The unique modified PMMA ETM films have been prepared and characterized at various thicknesses. At the optimal thickness of 25 nm, the experimental results showed that the multilayer solar cell's open-circuit voltage increased from 0.99 V to 1.11 V, and the short-circuit current value was elevated from 16.98 mA/cm2 to 21.11 mA/cm2. The device fill factor value was also improved from 60.67% to 76.12%. Thus, the device power-conversion efficiency exhibited significant improvement from 10.2% to 18.0%. In addition, the output power Pmax was as good as 1.79 mW. The PMMA, in conjunction with fullerene C60, has become an excellent candidate for the role of charge transporting for the multilayer perovskite solar cells.
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