Abstract
In this study, amorphous molybdenum-doped indium zinc oxide (a-IZMO) thin film transistors (TFTs) were prepared by radio frequency magnetron sputtering at room temperature. It was found that molybdenum doping increased the optical bandgap of the a-IZMO films, improved the current on/off ratio and subthreshold swing value of the a-IZMO-TFTs. X-ray photoelectron spectroscopy analysis shows that Mo-doping can efficiently suppress the formation of oxygen vacancies. When an appropriate Mo content at molar ratio of 2.9% was doped into the IZO active layer, the TFTs with field effect mobility of 2.62 cm2 V−1s−1, and current on/off ratio of larger than 106 was obtained.
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