Abstract
The growth of nanocrystalline indium selenide thin films by using a modified chemical bath deposition method was studied. In order to obtain the indium selenide thin films, the preparative conditions, such as concentration, pH of cationic precursors, adsorption, reaction and rinsing time duration were optimized. The growth of the thin films was found to be 6.3 nm per cycle. The films were characterized by various experimental methods for structural, surface morphological, compositional, optical and electrical properties. The films were nanocrystalline and showed the phases InSe, In 2Se 3 and In 6Se 7. The surface of the film was rough. The absorbance of the film was found to be high (10 4 cm −1) and the optical band gap was 2.5 eV. The electrical resistivity was of the order of 10 6 Ω cm with n-type electrical conductivity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
