Abstract
In1−xGaxAsyP1−y epilayers with three different solid compositions of ln0.73Ga0.27As0.60P1.40, In0.59Ga0.41As0.87P0.13 and ln0.53Ga0.47As were grown on (1 0 0) InP substrate at 623° C by the step cooling technique of liquid-phase epitaxy. From the optical transmission measurements, the corresponding wavelengths of the InGaAsP epilayers were 1.30, 1.55 and 1.69 μm, respectively, which are in good agreement with those obtained from the calculations using Vegard's law. The full widths at half maximum of the photoluminescent spectra at 14 K of these layers were as low as 18.6, 22.5 and 7.9meV, respectively. The electron mobility of the InGaAsP epilayers is a function of the solid composition with the ln0.53Ga0.47As epilayer having the highest electron mobility. The mobility and concentration of this layer are 8,873cm2V−1 sec−1, 9.7×1015cm−3 and 22,900 cm2V−1 sec−1, 8.5×1015cm−3 at 300 and 77 K, respectively. The compensation ratio is between 2 and 5.
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