Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

Abstract

Magnesium oxide (MgO) thin films have been prepared on Si(100), SiO 2(100) Si and Pt(111) Si substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( T s) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( T s ≈ 400–680°C), SiO 2 Si and Pt Si were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.