Abstract
Thin films of Sb 2Se 3 have been electrodeposited from an aqueous acidic bath at room temperature using selenium dioxide as a selenium ion source. The electrodeposition potentials for different bath compositions and concentrations of solution are estimated from the polarization curves. It has been found that SbCl 3 and SeO 2 in the volumetric proportion as 9 : 1 and their equimolar solutions of 0.0075 M form a good quality films. The films are annealed in a nitrogen atmosphere at 200°C for 1 h. The films are characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and optical absorption techniques. The XRD patterns of the films show that the as-deposited and annealed films are polycrystalline. The optical band gap energy for direct transition in Sb 2Se 3 thin films is found to be 1.55 eV.
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