Abstract
High quality ceramic thin films were fabricated by thin film deposition process in semiconductor field in order to fabricate high performance carbon/SiO 2 /Al 2 O3 membrane. α-Al 2 O 3 substrate was used as a supporting material. A severe thermal stress and rough surface for active ceramic top layer such as zeolite were observed. To overcome thermal stress, intermediate layer of SiO2 and diamond-like carbon (DLC) thin film were used. SiO 2 and DLC thin films on porous alumina support were deposited using plasma-enhanced chemical vapour deposition (PECVD). Homogeneous and smooth surfaces and interfaces of DLC/SiO 2 /Al 2 O 3 membrane were observed by FESEM. The phases of DLC and SiO 2 thin films were identified by X-ray diffraction pattern. Gas permeabilities of the nanofiltration membrane with DLC/SiO 2 /Al 2 O 3 were observed at various annealing temperatures. Mixed gas permeability of the membrane with 1 μm-thick SiO2 and 2 μm-thick DLC thin film annealed at 200 °C was ∼18 ccm at 1018 mb back pressure.
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