Abstract
Thin films of CuInSe 2 can be completely converted to CuInS 2 after annealing in elemental sulfur vapor. The conversion process was done in an MBE chamber and the film was exposed to a heated sulfur source. Our experiments showed that complete conversion of a 1.0 μm-thick CuInSe 2 film into CuInS 2 was achieved when the film was annealed in a sulfur beam flux of 4.5×10 16 atoms/cm 2 s at 450 °C for 5 min. This is the shortest conversion time ever reported for the same annealing temperature. The speed of conversion process depended on sulfur vapor flux, film crystallinity and original film composition. Among them, the film composition was the most important factor and confirmed by KCN etching of a Cu-rich sample. The PL spectrum of a converted Cu-rich CuInS 2 film showed a broad emission peak at about 1.34 eV that was caused by the donor–acceptor transition and might be associated with the S-vacancy and the In-vacancy.
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